Cross beam lithography at TASC
نویسنده
چکیده
Highlights Focused Ion Beam Lithography is a very powerful technique for directly writing patterns on many substrates, it is a mask-less and resist-less technique that allows a very wide range of applications, providing a resolution down to 10 nm. Joined to the Electron Beam Lithography and the Gas Deposition System it became a very versatile tool for many fabrication processes. Using a dual-beam LEO XB1540 composed by a 30 keV Gallium ion beam column plus a 30 keV electron beam GEMINI column, we have fabricated many devices with a resolution down to nanometric scale, by exploiting FIB Milling (FIBM), FIB Gas Assisted Etching (FIBGAE) and E-beam or I-beam Induced Deposition. The machine is powered by ELPHY RAITH lithographic software and pattern generator.
منابع مشابه
Technique for preparation of precise wafer cross sections and applications to electron beam lithography of poly„methylmethacrylate... resist
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تاریخ انتشار 2005