Cross beam lithography at TASC

نویسنده

  • Stefano Cabrini
چکیده

Highlights Focused Ion Beam Lithography is a very powerful technique for directly writing patterns on many substrates, it is a mask-less and resist-less technique that allows a very wide range of applications, providing a resolution down to 10 nm. Joined to the Electron Beam Lithography and the Gas Deposition System it became a very versatile tool for many fabrication processes. Using a dual-beam LEO XB1540 composed by a 30 keV Gallium ion beam column plus a 30 keV electron beam GEMINI column, we have fabricated many devices with a resolution down to nanometric scale, by exploiting FIB Milling (FIBM), FIB Gas Assisted Etching (FIBGAE) and E-beam or I-beam Induced Deposition. The machine is powered by ELPHY RAITH lithographic software and pattern generator.

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تاریخ انتشار 2005